Tetsuya Kaneko - Concepedia

Author

Tetsuya Kaneko

Tokai University ORCID

Also Known As

Kondo, M., Noge, H., T Kaneko, T. KANEKO, T. Kaneko, Tetsuya KANEKO, Tetsuya Kaneko

160

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Tokai University National Institute of Advanced Industrial Science and Technology Kanazawa University Waseda University Toshiba (Japan)

About

Tetsuya Kaneko is an author at Tokai University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	30	1.2K
2	Applied Physics	16	20	587
3	Chemical Engineering	5	5	258
4	Biomolecular Engineering	1	1	263
5	Chemistry	1	1	263

Tetsuya Kaneko

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Asymmetric amplifying phenomena in enantioselective addition of diethylzinc to benzaldehyde Nobuki Oguni, Yoshiharu Matsuda, Tetsuya Kaneko Journal of the American Chemical Society EngineeringChemical AnalysisAltmetric Attention ScoreOrganic ChemistryChemistry	1988	263
Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells Hiroyuki Fujiwara, Tetsuya Kaneko, Michio Kondo Applied Physics Letters Electrical EngineeringChemical EngineeringEngineeringOrganic Solar CellConversion Efficiency	2007	125
Spray Pyrolyzed TiO2 Embedded Multi-Layer Front Contact Design for High-Efficiency Perovskite Solar Cells Md. Shahiduzzaman, Mohammad Ismail Hossain, Sem Visal, Nano-Micro Letters	2021	78
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology Maejima Hiroshi, K. Kanda, Susumu Fujimura, Non-volatile MemoryElectrical EngineeringMemory ArchitectureEngineeringHigh Bandwidth Memory	2018	75
Low-Temperature-Processed Brookite-Based TiO<sub>2</sub> Heterophase Junction Enhances Performance of Planar Perovskite Solar Cells Md. Shahiduzzaman, Sem Visal, Mizuki Kuniyoshi, Nano Letters	2018	71
A 17 bit oversampling D-A conversion technology using multistage noise shaping Y. Matsuya, K. Uchimura, Akira Iwata, IEEE Journal of Solid-State Circuits Digital AudioOutput MethodEngineeringData ConverterMixed-signal Integrated Circuit	1989	69
A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate Yan Li, Seungpil Lee, Yupin Fong, IEEE Journal of Solid-State Circuits Nm TechnologyElectrical EngineeringNon-volatile MemoryEngineering4-Level Nand Flash	2009	53
Compact TiO<sub>2</sub>/Anatase TiO<sub>2</sub> Single-Crystalline Nanoparticle Electron-Transport Bilayer for Efficient Planar Perovskite Solar Cells Md. Shahiduzzaman, Hiroto Ashikawa, Mizuki Kuniyoshi, ACS Sustainable Chemistry & Engineering Materials ScienceEfficient Electron TransportChemical EngineeringEngineeringPerovskite Solar Cell	2018	49
13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology Noboru Shibata, K. Kanda, Tatsuo Shimizu, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer Architecture2D-flash Memory	2019	49
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate Yan Li, Seungpil Lee, Yupin Fong, D2 ChipsElectrical EngineeringNon-volatile MemoryEngineeringGb D3 Chip	2008	46

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