Bin Yu

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Haowei Zhang, Lifeng Liu, Bin Gao et al. · Applied Physics Letters · 2011 · 203 citations

Engineering, Materials Engineering, Materials Science +16

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Bin Gao, Bing Sun, Haowei Zhang et al. · IEEE Electron Device Letters · 2009 · 175 citations

Engineering, Electrical Engineering, Materials Science +17

Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

Nuo Xu, L.F. Liu, Xianwen Sun et al. · Semiconductor Science and Technology · 2008 · 139 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of a Novel 24-Slot/14-Pole Six-Phase Fault-Tolerant Modular Permanent-Magnet In-Wheel Motor for Electric Vehicles

Ping Zheng, Fan Wu, Yu Lei et al. · Energies · 2013 · 70 citations · Full text

Engineering, Automotive Engineering, Electrical Engineering +17

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Bin Gao, Haowei Zhang, Bing Chen et al. · IEEE Electron Device Letters · 2011 · 70 citations

Engineering, Electrical Engineering, Electronic Materials +16