Shaojian Su

GeSn p-i-n photodetector for all telecommunication bands detection

Shaojian Su, Buwen Cheng, Chunlai Xue et al. · Optics Express · 2011 · 242 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-responsivity GeSn short-wave infrared p-i-n photodetectors

Dongliang Zhang, Chunlai Xue, Buwen Cheng et al. · Applied Physics Letters · 2013 · 111 citations

Engineering, Electrical Engineering, Materials Science +17

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$</tex> </formula> Passivation

Xiao Gong, Genquan Han, Fan Bai et al. · IEEE Electron Device Letters · 2013 · 100 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(001) substrates

Shaojian Su, Wei Wang, Buwen Cheng et al. · Journal of Crystal Growth · 2011 · 89 citations

Engineering, Materials Engineering, Materials Science +16

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

Genquan Han, Shaojian Su, Chunlei Zhan et al. · 2011 · 85 citations

Engineering, Electrical Engineering, Materials Science +15