High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

Abstract

The first demonstration of GeSn pMOSFETs was reported. Key highlights of this work also includes a 180 °C GeSn MBE growth, sub-370 °C Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at 350 °C. A hole mobility of 430 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs is obtained for GeSn pMOSFETs, which is 66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a 64% lower S/D resistance as compared to the Ge control devices.