Toshinari Watanabe

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition

Masanori Natsui, Akira Tamakoshi, H. Honjo et al. · IEEE Journal of Solid-State Circuits · 2020 · 64 citations

Engineering, Computer Engineering, Materials Science +15

A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

Masanori Natsui, Y. Noguchi, M. Yasuhira et al. · IEEE Journal of Solid-State Circuits · 2019 · 62 citations

Engineering, Computer Engineering, Electrical Engineering +17

Secondary electron emission and glow discharge properties of 12CaO·7Al₂O₃electride for fluorescent lamp applications

Satoru Watanabe, Toshinari Watanabe, Kazuhiro Ito et al. · Science and Technology of Advanced Materials · 2011 · 49 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

S. Miura, K. Nishioka, Hiroshi Naganuma et al. · IEEE Transactions on Electron Devices · 2020 · 40 citations

Engineering, Electrical Engineering, Materials Science +16

12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi et al. · 2019 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +14