M. Yasuhira

First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

H. Honjo, T. V. A. Nguyen, T. Watanabe et al. · 2019 · 79 citations

Natural Sciences, Electrical Engineering, Materials Science +15

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition

Masanori Natsui, Akira Tamakoshi, H. Honjo et al. · IEEE Journal of Solid-State Circuits · 2020 · 64 citations

Engineering, Computer Engineering, Materials Science +15

A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

Masanori Natsui, Y. Noguchi, M. Yasuhira et al. · IEEE Journal of Solid-State Circuits · 2019 · 62 citations

Engineering, Computer Engineering, Electrical Engineering +17

14ns write speed 128Mb density Embedded STT-MRAM with endurance>10¹⁰ and 10yrs retention@85°C using novel low damage MTJ integration process

H. Sato, H. Honjo, Takaya Watanabe et al. · 2018 · 54 citations

Engineering, Materials Engineering, Materials Science +10

Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹

S. Miura, K. Nishioka, Hiroshi Naganuma et al. · IEEE Transactions on Electron Devices · 2020 · 40 citations

Engineering, Electrical Engineering, Materials Science +16