Muhammad Ali - Concepedia

Author

Muhammad Ali

Technische Universität Ilmenau ORCID

Also Known As

M. Ali, M. Y. Ali, M. Yusuf Ali, M.Y. Ali, Muhammad Ali, Muhammad Y. Ali, Muhammad Yusuf Ali, Muhlis Ali

Publications

442

Citations

H-Index

Concepts

All Affiliations

Technische Universität Ilmenau The University of Texas at Arlington Kirchhoff (Germany)General Electric (United States)

About

Muhammad Ali is an author at Technische Universität Ilmenau specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	397
2	Applied Physics	10	10	329
3	Chemical Engineering	4	4	115
4	Chemistry	2	2	50
5	Education	1	1	20

Muhammad Ali

Publications

397

Citations

H-Index

Page 1

	Year	Citations
Pt/GaN Schottky diodes for hydrogen gas sensors Muhammad Ali, V. Cimalla, V. Lebedev, Sensors and Actuators B Chemical Electrical EngineeringEngineeringPt/gan Schottky DiodesGas SensorApplied Physics	2005	73
NOx sensing properties of In2O3 thin films grown by MOCVD Muhammad Ali, Ch. Y. Wang, C.‐C. Röhlig, Sensors and Actuators B Chemical Materials ScienceChemical EngineeringEngineeringOxide ElectronicsSurface Science	2007	54
Mechanics of damage initiation and growth in a TBC/superalloy system Muhammad Ali, S. Q. Nusier, Golam Newaz International Journal of Solids and Structures Damage MechanismEngineeringSuperalloyMechanical BehaviorImpact Loading	2001	48
Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole Muhammad Ali, Meng Tao Journal of Applied Physics Materials ScienceSemiconductorsSurface TechnologyElectronic DevicesSchottky Barrier Height	2007	43
Reduced surface electron accumulation at InN films by ozone induced oxidation V. Cimalla, V. Lebedev, Ch. Y. Wang, Applied Physics Letters Advanced Oxidation ProcessEngineeringAtmospheric PhotochemistryOxidation ResistanceChemistry	2007	37
A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface Guanghua Song, Muhammad Ali, Meng Tao IEEE Electron Device Letters Electrical EngineeringEngineeringReverse SaturationPhysicsBarrier Height	2007	35
A Study of Hydrogen Sensing Performance of Pt–GaN Schottky Diodes Muhammad Ali, V. Cimalla, V. Lebedev, IEEE Sensors Journal Chemical EngineeringElectrical EngineeringEngineeringElectronic DevicesHigh Voltage Engineering	2006	27
Effect of surface oxidation on electron transport in InN thin films V. Lebedev, Ch. Y. Wang, V. Cimalla, Journal of Applied Physics EngineeringOxidation ResistanceCharge TransportChemical EngineeringNanoelectronics	2007	21
A Methodology to Measure Input Power and Effective Area for Characterization of Direct THz Detectors Muhammad Ali, Matteo Perenzoni, David Stoppa IEEE Transactions on Instrumentation and Measurement Thz PhotonicsEngineeringMeasurementEducationTerahertz Photonics	2016	20
A high Schottky barrier between Ni and S-passivated n-type Si(100) surface Guanghua Song, Muhammad Ali, Meng Tao Solid-State Electronics S-passivated N-type SiEngineeringPhysicsSurface ScienceApplied Physics	2008	16

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