Rashmi Rashmi

An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs

Rashmi Rashmi, Abhinav Kranti, Subhasis Haldar et al. · Solid-State Electronics · 2002 · 173 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +6

2‐D analytical model for current–voltage characteristics and output conductance of AlGaN/GaN MODFET

Rashmi Rashmi, Subhasis Haldar, R.S. Gupta · Microwave and Optical Technology Letters · 2001 · 45 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +13

Comprehensive analysis of small-signal parameters of fully strained and partially relaxed high Al-content lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs

Rashmi Rashmi, Abhinav Kranti, Subhasis Haldar et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 30 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +13

Impact of strain relaxation of Al Ga1−N layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched Al Ga1−N/GaN HEMTs

Rashmi Rashmi, Abhinav Kranti, Subhasis Haldar et al. · Microelectronics Journal · 2002 · 23 citations

Analytical model for dc characteristics and small-signal parameters of AIGaN/GaN modulation-doped field-effect transistor for microwave circuit applications

Rashmi Rashmi, Angu Agrawal, S. Sen et al. · Microwave and Optical Technology Letters · 2000 · 21 citations

Electrical Engineering, Engineering, Microwave Circuit Applications +11