Microwave and Optical Technology Letters · 2000 · 21 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice ModelingDevice SimulationHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesWide-bandgap Semiconductor DevicesCharge ControlCurrent GainCutoff FrequencyMicrowave Circuit ModelingMicrowave DevicesSmall-signal Device ModelingSmall-signal GainSmall-signal Modeling
An improved charge-control model for the dc and microwave characteristics of an Al0.15Ga0.85N/GaN modulation-doped FET (MODFET) is developed. The effect of piezoelectric polarization-induced charge at the AlGaN/GaN heterointerface has been incorporated. The small-signal microwave parameters have been evaluated to determine the current–gain cutoff frequency (ft). High current levels (503.4 mA/mm), large gm (160 mS/mm), and high ft (9.48 GHz) are achieved for a 1 μm Al0.15Ga0.85N/GaN MODFET. The results so obtained are in close agreement with experimental data. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 413–419, 2000.
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Emerging gallium nitride based devices
S. Noor Mohammad, A. Salvador, H. Morkoç̌ · Proceedings of the IEEE · 1995 · 614 citations
Model for modulation doped field effect transistor
T. J. Drummond, H. Morkoç̌, K. Lee et al. · IEEE Electron Device Letters · 1982 · 206 citations