Impact of strain relaxation of Al Ga1−N layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched Al Ga1−N/GaN HEMTs - Concepedia

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Impact of strain relaxation of Al Ga1−N layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched Al Ga1−N/GaN HEMTs

23

Citations

20

References

2002

Year

Rashmi Rashmi, Abhinav Kranti, Subhasis Haldar, R.S. Gupta

Microelectronics Journal

References

	Year	Citations

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