M. J. Pullin

Suppression of Auger recombination in arsenic-rich InAs1−<i>x</i>Sb<i>x</i> strained layer superlattices

C. M. Ciesla, B. N. Murdin, C. R. Pidgeon et al. · Journal of Applied Physics · 1996 · 60 citations

Optical Materials, Engineering, Laser Applications +17

4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs_1-xSb_xstrained layer superlattices

Ping Tang, M. J. Pullin, Sunjae Chung et al. · Semiconductor Science and Technology · 1995 · 51 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

M. J. Pullin, Harvey R. Hardaway, Joerg Heber et al. · Applied Physics Letters · 1999 · 37 citations

Semiconductor Technology, Negative Luminescence Efficiency, Electrical Engineering +10

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

M. J. Pullin, Harvey R. Hardaway, Joerg Heber et al. · Applied Physics Letters · 1999 · 34 citations

Semiconductors, Photonics, Electrical Engineering +15

Band alignments and offsets in In(As,Sb)/InAs superlattices

Y. B Li, Dipankar Bain, L. Hart et al. · Physical review. B, Condensed matter · 1997 · 28 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Electrical Engineering +15