Publication | Closed Access
Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices
37
Citations
10
References
1999
Year
Semiconductor TechnologyNegative Luminescence EfficiencyElectrical EngineeringElectronic DevicesEngineeringIi-vi SemiconductorOptoelectronic MaterialsApplied PhysicsP–n Diode DevicesMultilayer HeterostructuresOptoelectronic DevicesNegative Luminescence OperationCompound Semiconductor
Negative luminescence operation is reported for p–n diode devices with type-II InAs/InAsSb strained-layer-superlattice active regions which have a spectral peak at 4.2 μm and a negative luminescence efficiency of up to 20%.
| Year | Citations | |
|---|---|---|
Page 1
Page 1