Harvey R. Hardaway

Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

M. J. Pullin, Harvey R. Hardaway, Joerg Heber et al. · Applied Physics Letters · 1999 · 37 citations

Semiconductor Technology, Negative Luminescence Efficiency, Electrical Engineering +10

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

M. J. Pullin, Harvey R. Hardaway, Joerg Heber et al. · Applied Physics Letters · 1999 · 34 citations

Semiconductors, Photonics, Electrical Engineering +15

InSb ∕ AlInSb quantum-well light-emitting diodes

G. R. Nash, Mary K. Haigh, Harvey R. Hardaway et al. · Applied Physics Letters · 2006 · 28 citations · Full text

Quantum Science, Electrical Engineering, Photonics +13

Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells

P. J. P. Tang, Harvey R. Hardaway, Joerg Heber et al. · Applied Physics Letters · 1998 · 27 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Recent developments in the applications of mid-infrared lasers, LEDs, and other solid state sources to gas detection

S. D. Smith, Harvey R. Hardaway, J G Crowder · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2002 · 21 citations

Immersion Optics, Diode Detectors, Engineering +22