A novel fluorescence probe for rapid and sensitive detection of tetracyclines residues based on silicon quantum dots

Z S Liu, Jingzhou Hou, Xianfeng Wang, +4

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy

EngineeringBiomedical DiagnosticsNanotechnologyNovel Fluorescence ProbeBioimaging +8

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes

L. C. Le, Desheng Zhao, Desheng Jiang, +8

Optics Express

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringElectron LeakageEngineering +10

New application of Mn-doped ZnS quantum dots: phosphorescent sensor for the rapid screening of chloramphenicol and tetracycline residues

Z S Liu, Jingzhou Hou, Qiang He, +3

Analytical Methods

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

Liangliang Wu, Desheng Zhao, Desheng Jiang, +9

Semiconductor Science and Technology

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface Science +8

Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region

Jing Yang, Degang Zhao, Desheng Jiang, +8

Optics Express

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSolid-state LightingEngineering +13

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

Haonan Wang, Desheng Jiang, J.J. Zhu, +5

Semiconductor Science and Technology

Wide-bandgap SemiconductorEngineeringInitial NucleationSemiconductorsInn Thin Films +14

Graphene oxide mediated CdSe quantum dots fluorescent aptasensor for high sensitivity detection of fluoroquinolones

Z S Liu, Jun Zhou, Xianfeng Wang, +7

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy

Graphene Quantum DotEngineeringGrapheneSingle-molecule DetectionAtomic Fluorescence Spectroscopy +7

Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

W B Liu, Desheng Zhao, Xiaojuan Sun, +9

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringStable Multiplication GainApplied Physics +9

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Jinlong Zhu, Ling‐Jun Wang, S M Zhang, +7

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorEngineeringEmission PeaksLtpl IntensityOptical Properties +14

Effect of annealing on photoluminescence properties of neon implanted GaN

Abdul Majid, Akbar Ali, Jia-Ji Zhu, +10

Journal of Physics D Applied Physics

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsLuminescence Properties +12