D. J. Towner

A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

C. Auth, C. Allen, A. Blattner et al. · 2012 · 758 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 10nm high performance and low-power CMOS technology featuring 3^rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects

C. Auth, A. Aliyarukunju, M. Asoro et al. · 2017 · 369 citations

Engineering, Computer Engineering, Electrical Engineering +17

45nm High-k + metal gate strain-enhanced transistors

C. Auth, A. Cappellani, Jang‐Soo Chun et al. · 2008 · 204 citations

Engineering, Computer Engineering, Electrical Engineering +17

Electrooptic modulation up to 40 GHz in a barium titanate thin film waveguide modulator

Pingsheng Tang, D. J. Towner, Tatsuhito Hamano et al. · Optics Express · 2004 · 111 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low-voltage, polarization-insensitive, electro-optic modulator based on a polydomain barium titanate thin film

Pingsheng Tang, D. J. Towner, Andreas Meier et al. · Applied Physics Letters · 2004 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +17