A. Kozanecki

Optically active erbium centers in silicon

H. Przybylińska, W. Jantsch, Yu. Suprun-Belevitch et al. · Physical review. B, Condensed matter · 1996 · 213 citations

Ii-vi Semiconductor, Photonics, Photonic Device +15

Lattice location and optical activity of Yb in III–V semiconducting compounds

A. Kozanecki, R. Gröetzschel · Journal of Applied Physics · 1990 · 39 citations

Superconducting Material, Optical Materials, Engineering +17

Ion beam and photoluminescence studies of Er and O implanted GaN

E. Alves, M.F. da Silva, J.C. Soares et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 28 citations

Electrical Engineering, Photoluminescence, Engineering +5

Lattice location of erbium implanted into GaAs

A. Kozanecki, M. Chan, C. Jeynes et al. · Solid State Communications · 1991 · 27 citations

Epitaxial Growth, Engineering, Physics +5

GaN doped with beryllium—An effective light converter for white light emitting diodes

H. Teisseyre, Michał Boćkowski, I. Grzegory et al. · Applied Physics Letters · 2013 · 26 citations

White Oled, Electrical Engineering, Solid-state Lighting +10