C. Schäffer

1200 V-trench-IGBT study with square short circuit SOA

T. Laska, F. Pfirsch, F. Hirler et al. · 2002 · 51 citations

Electrical Engineering, Engineering, Power Device +11

Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti

M. Fugger, Mathias Plappert, C. Schäffer et al. · Microelectronics Reliability · 2014 · 30 citations

Materials Engineering, Materials Science, Engineering +10

Tailoring of field-stop layers in power devices by hydrogen-related donor formation

F.‐J. Niedernostheide, H.‐J. Schulze, H.P. Felsl et al. · 2016 · 21 citations

Hydrogen Energy Technology, Engineering, Power Devices +20

Reliability aspects of copper metallization and interconnect technology for power devices

F. Hille, Roman Roth, C. Schäffer et al. · Microelectronics Reliability · 2016 · 17 citations

Reliability, Materials Science, Electrical Engineering +14

Power Cu metallization for future power devices — Process integration concept and reliability

R. Roth, H. Schulze, C. Schäffer et al. · 2016 · 16 citations

Engineering, Power Cu Metallization, Cu Wedge +17