P. Roentgen

Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates

Y. D. Galeuchet, P. Roentgen · Journal of Crystal Growth · 1991 · 91 citations

Materials Science, Engineering, Surface Science +5

GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures

Y. D. Galeuchet, P. Roentgen, Volker Gräf · Journal of Applied Physics · 1990 · 90 citations

Materials Science, Epitaxial Growth, Engineering +13

Thermal carrier emission from a semiconductor quantum well

Steven Weber, W. Limmer, K. Thonke et al. · Physical review. B, Condensed matter · 1995 · 67 citations

Categoryquantum Electronics, Engineering, Quantum Well +17

Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements

P. W. Epperlein, G.L. Bona, P. Roentgen · Applied Physics Letters · 1992 · 53 citations

Optical Materials, Engineering, Laser Science +23

Buried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxy

Y. D. Galeuchet, P. Roentgen, Volker Gräf · Applied Physics Letters · 1988 · 51 citations

Materials Science, Engineering, Crystalline Defects +15