Y. D. Galeuchet

Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates

Y. D. Galeuchet, P. Roentgen · Journal of Crystal Growth · 1991 · 91 citations

Materials Science, Engineering, Surface Science +5

GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures

Y. D. Galeuchet, P. Roentgen, Volker Gräf · Journal of Applied Physics · 1990 · 90 citations

Materials Science, Epitaxial Growth, Engineering +13

Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells

D. J. Arent, S. Nilsson, Y. D. Galeuchet et al. · Applied Physics Letters · 1989 · 78 citations

Optical Materials, Engineering, Nonplanar Substrates +18

Buried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxy

Y. D. Galeuchet, P. Roentgen, Volker Gräf · Applied Physics Letters · 1988 · 51 citations

Materials Science, Engineering, Crystalline Defects +15

<i>In</i> <i>situ</i> buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy

Y. D. Galeuchet, H. Rothuizen, P. Roentgen · Applied Physics Letters · 1991 · 50 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +17