L. R. Bailey

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

P. D. C. King, T. D. Veal, C. E. Kendrick et al. · Physical Review B · 2008 · 135 citations

Electrical Engineering, Engineering, Valence Band Offset +13

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T. D. Veal, P. D. C. King, S. A. Hatfield et al. · Applied Physics Letters · 2008 · 93 citations · Full text

Materials Science, Semiconductors, Wide-bandgap Semiconductor +14

Band bending at the surfaces of In-rich InGaN alloys

L. R. Bailey, T. D. Veal, P. D. C. King et al. · Journal of Applied Physics · 2008 · 40 citations · Full text

Materials Science, Materials Engineering, Downward Band +13

Surface electronic properties of undoped InAlN alloys

P. D. C. King, T. D. Veal, A. Adikimenakis et al. · Applied Physics Letters · 2008 · 18 citations · Full text

Materials Engineering, Materials Science, Surface Electronic Properties +13

Sulfur passivation of InN surface electron accumulation

L. R. Bailey, T. D. Veal, C. E. Kendrick et al. · Applied Physics Letters · 2009 · 15 citations · Full text

Downward Band, Ii-vi Semiconductor, Surface Characterization +13