Shin-Nam Hong

Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealing

Shin-Nam Hong, G. A. Ruggles, J. J. Wortman et al. · IEEE Transactions on Electron Devices · 1991 · 45 citations

Engineering, Electrical Properties, Semiconductor Device +18

Characterization of ultra-shallow p/sup +/-n junction diodes fabricated by 500-eV boron-ion implantation

Shin-Nam Hong, G. A. Ruggles, J. J. Wortman et al. · IEEE Transactions on Electron Devices · 1991 · 44 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

Huicai Zhong, Shin-Nam Hong, You-Seok Suh et al. · 2002 · 44 citations

Gate Electrodes, Engineering, Silicon On Insulator +16

Formation of ultrashallow <i>p</i>+-<i>n</i> junctions by low-energy boron implantation using a modified ion implanter

Shin-Nam Hong, G. A. Ruggles, J.J. Paulos et al. · Applied Physics Letters · 1988 · 30 citations

Engineering, Ion Beam Instrumentation, Optoelectronic Devices +16

Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Huicai Zhong, Greg Heuss, You-Seok Suh et al. · Journal of Electronic Materials · 2001 · 17 citations

Materials Science, Electrical Engineering, Engineering +9