J. C. Tinoco - Concepedia

Author

J. C. Tinoco

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional ORCID

Also Known As

J C Tinoco, J. C. Tinoco, J. C. Tinoco Magaña, J. Tinoco, J.C. Tinoco, Julio César Tinoco Magaña, Julio C Tinoco, Julio C. Tinoco, Julio C. Tinoco-Magaña, Julio César Tinoco

Publications

623

Citations

H-Index

Concepts

All Affiliations

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional Universidad Veracruzana UCLouvain Benemérita Universidad Autónoma de Puebla Universitat Rovira i Virgili

About

J. C. Tinoco is an author at Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	387
2	Applied Physics	11	11	300
3	Electrical Engineering	11	12	268
4	Computer Engineering	4	4	98
5	Materials Engineering	2	2	37

J. C. Tinoco

Publications

491

Citations

H-Index

Page 1

	Year	Citations
Physicochemical properties of polycaprolactone/collagen/elastin nanofibers fabricated by electrospinning Yanet E. Aguirre-Chagala, V. Altúzar, E. León-Sarabia, Materials Science and Engineering C NanofiberPolycaprolactone/collagen/elastin NanofibersElectroactive MaterialBiofabrication	2017	85
Parasitic Gate Capacitance Model for Triple-Gate FinFETs Silvestre Salas-Rodríguez, J. C. Tinoco, Andrea G. Martínez‐Lopez, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringNanoelectronics	2013	58
Impact of Extrinsic Capacitances on FinFET RF Performance J. C. Tinoco, Silvestre Salas-Rodríguez, Andrea G. Martínez‐Lopez, IEEE Transactions on Microwave Theory and Techniques 3D Ic ArchitectureElectrical EngineeringPhysical Design (Electronics)EngineeringRf Semiconductor	2012	51
Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers J. C. Tinoco, M. Estrada Microelectronics Reliability Materials ScienceEngineeringOxidation ResistanceOxide ElectronicsSurface Science	2003	43
High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors Mostafa Emam, J. C. Tinoco, Danielle Vanhoenacker‐Janvier, Solid-State Electronics Electrical EngineeringEngineeringRf SemiconductorElectronic EngineeringBias Temperature Instability	2008	32
Stable inks for inkjet printing of TiO2 thin films Wendy Yaznay Padrón-Hernández, M.C. Ceballos-Chuc, Dena Pourjafari, Materials Science in Semiconductor Processing Materials ScienceEngineeringPrinted ElectronicsThin FilmsTio2 Thin Films	2018	30
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures J. C. Tinoco, M. Estrada, A. Cerdeira Microelectronics Reliability Materials ScienceEngineeringOxide ElectronicsApplied PhysicsConduction Mechanisms	2007	24
Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials J. C. Tinoco, M. Estrada, H. Báez, Thin Solid Films Materials ScienceMaterials EngineeringEngineeringOxidation ResistanceOxide Electronics	2005	22
New RF series extrinsic resistances extraction procedure for deep-submicron MOS transistors J. C. Tinoco, J.‐P. Raskin DIAL (Catholic University of Leuven)	2010	19
New RF extrinsic resistances extraction procedure for deep‐submicron MOS transistors J. C. Tinoco, Jean‐Pierre Raskin International Journal of Numerical Modelling Electronic Networks Devices and Fields EngineeringDeep‐submicron Mos TransistorsIntegrated CircuitsRf Circuit DesignSemiconductor Device	2009	18

Page 1