Lars F. Voss - Concepedia

Author

Lars F. Voss

Lawrence Livermore National Laboratory ORCID

Also Known As

Bonn, Fnnkfurt Hundertdreinigster, L F Voss, L Voss, L Wohler-, L. F. Voss, L. Voss, L. Voß, L.F. Voss, Lars F. Voss

185

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Lawrence Livermore National Laboratory University of Florida University of Nebraska–Lincoln RTX (United States)Radiation Monitoring Devices (United States)

About

Lars F. Voss is an author at Lawrence Livermore National Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	34	970
2	Applied Physics	16	29	572
3	Chemistry	6	6	379
4	Natural Sciences	5	5	78
5	Chemical Engineering	4	4	336

Lars F. Voss

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Li‐Chia Tien, P.W. Sadik, D. P. Norton, Applied Physics Letters Materials ScienceRoom TemperatureChemical EngineeringHydrogen Energy TechnologyEngineering	2005	281
High aspect ratio composite structures with 48.5% thermal neutron detection efficiency Qinghui Shao, Lars F. Voss, Adam Conway, Applied Physics Letters Materials ScienceEngineeringRadiation DetectionNuclear PhysicsNuclear Security	2013	60
Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources Sudip K. Mazumder, Lars F. Voss, Karen M. Dowling, IEEE Journal of Emerging and Selected Topics in Power Electronics Wide-bandgap SemiconductorEngineeringPower ElectronicsPhotovoltaicsSemiconductor Device	2023	56
Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond David L. Hall, Lars F. Voss, Paulius Grivickas, IEEE Electron Device Letters Wide-bandgap SemiconductorShort Wavelength OpticEngineeringPhotoconductive SwitchOptoelectronic Devices	2020	36
Characterization of bulk GaN rectifiers for hydrogen gas sensing Lars F. Voss, S. J. Pearton, Hung-Ta Wang, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2005	35
Fabrication Methodology of Enhanced Stability Room Temperature TlBr Gamma Detectors Adam Conway, Lars F. Voss, A. J. Nelson, IEEE Transactions on Nuclear Science EngineeringChemistryThallium BromideNuclear MaterialsInstrumentation	2013	28
A Total Internal Reflection Photoconductive Switch Mihail Bora, Lars F. Voss, Paulius Grivickas, IEEE Electron Device Letters PhotonicsNovel Illumination TechniqueNormal IlluminationEngineeringPhotoelectric Sensor	2019	28
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Lars F. Voss, K. Ip, S. J. Pearton, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Electrical EngineeringCircuit DevicesEngineeringDiameter WaferRf Semiconductor	2008	27
Ultradeep electron cyclotron resonance plasma etching of GaN S. E. Harrison, Lars F. Voss, Andrea M. Torres, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceElectrical EngineeringEngineeringNanotechnologySurface Science	2017	26
Design considerations for three-dimensional betavoltaics John W. Murphy, Lars F. Voss, Clint D. Frye, AIP Advances EngineeringEnergy EfficiencyEnergy ConversionPhotovoltaic SystemPower Electronics	2019	25

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