M. Topf

On the nature of the 3.41 eV luminescence in hexagonal GaN

Stefan Fischer, G. Steude, D.M. Hofmann et al. · Journal of Crystal Growth · 1998 · 79 citations

Hexagonal Gan, Wide-bandgap Semiconductor, Engineering +7

A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films

D. Meister, Matthias Böhm, M. Topf et al. · Journal of Applied Physics · 2000 · 44 citations

Semiconductors, Wide-bandgap Semiconductor, Chemical Engineering +14

Localized vibrational modes in GaN:O tracing the formation of oxygen<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>DX</mml:mi></mml:math>-like centers under hydrostatic pressure

Christian Wetzel, Hiroshi Amano, Isamu Akasaki et al. · Physical review. B, Condensed matter · 2000 · 17 citations

Wide-bandgap Semiconductor, Engineering, Vibrational Modes +16

Electrical and optical properties of p-SiC/n-GaN heterostructures

M. Topf, D. Meister, I. Dirnstorfer et al. · Materials Science and Engineering B · 1997 · 14 citations

Electrical Engineering, Engineering, Applied Physics +5

Strong morphological dependence of luminescence efficiency and emission wavelength in hexagonal GaN crystallites directly imaged by scanning cathodoluminescence microscopy

F. Bertram, J. Christen, Michael Schmidt et al. · Materials Science and Engineering B · 1997 · 11 citations

Materials Science, Hexagonal Gan, Solid-state Lighting +7