A. P. Wijnheijmer - Concepedia

Author

A. P. Wijnheijmer

Eindhoven University of Technology

Also Known As

A P Wijnheijmer, A. P. Wijnheijmer, A. P. Wijnheijmer, Wijnheijmer, AP (Ineke)

Publications

588

Citations

H-Index

Concepts

All Affiliations

Eindhoven University of Technology University of Göttingen

About

A. P. Wijnheijmer is an author at Eindhoven University of Technology specializing in physics, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	391
2	Applied Physics	8	8	391
3	Electrical Engineering	3	3	114
4	Natural Sciences	2	2	86
5	Medicine	1	1	191

A. P. Wijnheijmer

Publications

572

Citations

H-Index

Page 1

	Year	Citations
Vector magnetic field microscopy using nitrogen vacancy centers in diamond B. Maertz, A. P. Wijnheijmer, Gregory D. Fuchs, Applied Physics Letters Magnetic PropertiesNitrogen Vacancy CentersEngineeringMicroscopyImage Fields	2010	191
Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope K. Teichmann, M. Wenderoth, Sebastian Loth, Physical Review Letters	2008	181
Enhanced Donor Binding Energy Close to a Semiconductor Surface A. P. Wijnheijmer, J. K. Garleff, K. Teichmann, Physical Review Letters EngineeringIonization ThresholdVacuum DeviceSilicon On InsulatorCoulombic Impurity	2009	72
Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy A. P. Wijnheijmer, J. K. Garleff, K. Teichmann, Physical Review B SemiconductorsIi-vi SemiconductorEngineeringTunneling MicroscopyPhysics	2011	32
Enhanced binding energy of manganese acceptors close to the GaAs(110) surface J. K. Garleff, A. P. Wijnheijmer, A. Yu. Silov, Physical Review B EngineeringMn AcceptorsNegative ResistanceBand GapSemiconductors	2010	27
Bistable behavior of silicon atoms in the (110) surface of gallium arsenide J. K. Garleff, A. P. Wijnheijmer, C. N. v. d.Enden, Physical Review B Bistable BehaviorEngineeringSilicon On InsulatorBistable ConfigurationsSemiconductor Device	2011	25
Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces K. Teichmann, M. Wenderoth, Sebastian Loth, Nano Letters SemiconductorsMicroscope TipElectrical EngineeringEngineeringTunneling Microscopy	2011	15
Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs A. P. Wijnheijmer, J. K. Garleff, M. A. v. d. Heijden, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena EngineeringMicroscopySemiconductorsIi-vi SemiconductorTunneling Microscopy	2010	15
Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor A. P. Wijnheijmer, X. Martí, V. Holý, Applied Physics Letters EngineeringMagnetic ResonanceMagnetoresistanceBand GapMagnetism	2012	14

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