K. Teichmann

Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope

K. Teichmann, M. Wenderoth, Sebastian Loth et al. · Physical Review Letters · 2008 · 183 citations · Full text

Engineering, Materials Science, Semiconductor Devices +16

Enhanced Donor Binding Energy Close to a Semiconductor Surface

A. P. Wijnheijmer, J. K. Garleff, K. Teichmann et al. · Physical Review Letters · 2009 · 72 citations · Full text

Natural Sciences, Materials Science, Electronic Materials +16

Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

A. P. Wijnheijmer, J. K. Garleff, K. Teichmann et al. · Physical Review B · 2011 · 32 citations

Engineering, Materials Science, Physics +17

Harmonic Oscillator Wave Functions of a Self-Assembled InAs Quantum Dot Measured by Scanning Tunneling Microscopy

K. Teichmann, M. Wenderoth, Henning Prüser et al. · Nano Letters · 2013 · 22 citations

Natural Sciences, Materials Science, Physics +17

Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

K. Teichmann, M. Wenderoth, Sebastian Loth et al. · Nano Letters · 2011 · 15 citations

Engineering, Electrical Engineering, Materials Science +17