J. K. Garleff

Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope

K. Teichmann, M. Wenderoth, Sebastian Loth et al. · Physical Review Letters · 2008 · 181 citations · Full text

Enhanced Donor Binding Energy Close to a Semiconductor Surface

A. P. Wijnheijmer, J. K. Garleff, K. Teichmann et al. · Physical Review Letters · 2009 · 72 citations · Full text

Engineering, Ionization Threshold, Vacuum Device +18

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

M. Hayne, Robert J. Young, E. P. Smakman et al. · Journal of Physics D Applied Physics · 2013 · 51 citations

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

E. P. Smakman, J. K. Garleff, Robert J. Young et al. · Applied Physics Letters · 2012 · 45 citations · Full text

Materials Science, Engineering, Tunneling Microscopy +14

Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

J. K. Garleff, Cem Çelebi, W. Van Roy et al. · Physical Review B · 2008 · 42 citations · Full text

Materials Science, Precise Impurity Identification, Ii-vi Semiconductor +14