Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope

K. Teichmann, M. Wenderoth, Sebastian Loth, +4

Physical Review Letters

Enhanced Donor Binding Energy Close to a Semiconductor Surface

A. P. Wijnheijmer, J. K. Garleff, K. Teichmann, +6

Physical Review Letters

EngineeringIonization ThresholdVacuum DeviceSilicon On InsulatorCoulombic Impurity +16

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

M. Hayne, Robert J. Young, E. P. Smakman, +9

Journal of Physics D Applied Physics

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

E. P. Smakman, J. K. Garleff, Robert J. Young, +3

Applied Physics Letters

Materials ScienceEngineeringTunneling MicroscopyPhysicsNanomaterials +12

Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

J. K. Garleff, Cem Çelebi, W. Van Roy, +3

Physical Review B

Materials SciencePrecise Impurity IdentificationIi-vi SemiconductorEngineeringTunneling Microscopy +12

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Tobias Nowozin, A. Marent, Leo Bonato, +7

Physical Review B

Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringPhysics +11

Surface Induced Asymmetry of Acceptor Wave Functions

Cem Çelebi, J. K. Garleff, A. Yu. Silov, +5

Physical Review Letters

Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringPhysics +13

Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

A. P. Wijnheijmer, J. K. Garleff, K. Teichmann, +3

Physical Review B

SemiconductorsIi-vi SemiconductorEngineeringTunneling MicroscopyPhysics +10

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

J. K. Garleff, A. P. Wijnheijmer, A. Yu. Silov, +5

Physical Review B

EngineeringMn AcceptorsNegative ResistanceBand GapSemiconductors +16

Bistable behavior of silicon atoms in the (110) surface of gallium arsenide

J. K. Garleff, A. P. Wijnheijmer, C. N. v. d.Enden, +1

Physical Review B

Bistable BehaviorEngineeringSilicon On InsulatorBistable ConfigurationsSemiconductor Device +17