David J. Houlton

Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors

John Auld, David J. Houlton, Anthony C. Jones et al. · Journal of Materials Chemistry · 1994 · 82 citations

Materials Science, Inorganic Chemistry, Engineering +12

Models of surface-confined metallocene derivatives

Irmi E. Buys, Trevor W. Hambley, David J. Houlton et al. · Journal of Molecular Catalysis · 1994 · 53 citations

Surface Characterization, Surface-confined Metallocene Derivatives, Engineering +5

Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride

S. Rushworth, Juliette R. Brown, David J. Houlton et al. · Advanced Materials for Optics and Electronics · 1996 · 24 citations

Materials Science, Materials Engineering, Chemical Engineering +13

The Gas‐Sensing Properties of Tin Oxide Thin Films Deposited by Metallorganic Chemical Vapor Deposition

Juliette R. Brown, Melvyn T. Cheney, P.W. Haycock et al. · Journal of The Electrochemical Society · 1997 · 22 citations

Materials Science, Undoped Films, Chemical Engineering +14

Investigations into the growth of AIN by MOCVD using tri-tert butylaluminium as an alternative aluminium source

Anthony C. Jones, John Auld, S. Rushworth et al. · Journal of Materials Chemistry · 1994 · 21 citations

Aluminium Nitride, Thin Film Physics, Engineering +18