Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors

Abstract

Thin films of ZnO have been grown by low-pressure MOCVD using methylzinc isopropoxide, MeZn(OPri), and methylzinc tert-butoxide, MeZn(OBut), in the absence of an added oxygen source. The films were grown on to glass substrates in the temperature range 250–400 °C with growth rates of between 0.2 and 4.4 µm h–1.