Investigations into the growth of AIN by MOCVD using tri-tert butylaluminium as an alternative aluminium source

Abstract

Thin films of AIN have been deposited at 500 and 600 °C by atmospheric-pressure MOCVD using the precursors tri-tert-butylaluminium (But3Al) and tert-butylamine (ButNH2). Growth rates of 0.5 µm h–1 were obtained at 500 °C. Post-growth oxidation of the AIN films was prevented by the deposition of a protective Al overlayer using But3Al.