I.-H. Lee

Nitrogen-polar GaN growth evolution on c-plane sapphire

Qian Sun, Y. S. Cho, I.-H. Lee et al. · Applied Physics Letters · 2008 · 73 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +13

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

A. Y. Polyakov, I.-H. Lee, N. B. Smirnov et al. · Journal of Applied Physics · 2011 · 52 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Fermi level pinning in heavily neutron-irradiated GaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 2006 · 41 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire

Jihoon Song, Heesuk Rho, Mun Seok Jeong et al. · Physical Review B · 2010 · 32 citations

Optical Materials, Engineering, Optical Characterization +16

Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

Chan‐Hwa Hong, Yonghee Jo, H.A. Kim et al. · Thin Solid Films · 2011 · 32 citations

Materials Science, Electrical Engineering, Optical Materials +9