H. M. Przewłocki - Concepedia

Author

H. M. Przewłocki

Also Known As

A. Kudła, H M Przewlocki, H. M. Przewlocki, H. M. Przewłocki, H. Przewlocki, H.M Przewlocki, H.M. Przewlocki, H.M. PrzewŁocki, H.M. Przewłocki, Henryk M. Przewlocki

Publications

351

Citations

H-Index

Concepts

All Affiliations

Institute of Electron Technology Duke University

About

H. M. Przewłocki is an author at Institute of Electron Technology specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	227
2	Applied Physics	11	13	227
3	Electrical Engineering	11	13	227
4	Education	1	1	11
5	Materials Engineering	1	1	15

H. M. Przewłocki

Publications

227

Citations

H-Index

Page 1

	Year	Citations
Theory and applications of internal photoemission in the MOS system at low electric fields H. M. Przewłocki Solid-State Electronics Electrical EngineeringEngineeringPhysicsElectron SpectroscopyApplied Physics	2001	29
The methods to determine flat-band voltage V FB in semiconductor of a MOS structure Krzysztof Piskorski, H. M. Przewłocki The 33rd International Convention MIPRO Device ModelingMos DeviceElectrical EngineeringMos StructureEngineering	2010	26
Internal photoemission characteristics of metal–insulator–semiconductor structures at low electric fields in the insulator H. M. Przewłocki Journal of Applied Physics Ultraviolet RadiationEngineeringMis StructuresOptoelectronic DevicesCharge Transport	1999	19
The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures H. M. Przewłocki, Tomasz Gutt, Krzysztof Piskorski Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2014	18
Photoelectrical measurements of the local value of the contact potential difference in the metal–insulator semiconductor (MIS) structures H. M. Przewłocki, L. Borowicz, D. Brzezińska, Thin Solid Films SemiconductorsElectrical EngineeringEngineeringPhysicsMetal–insulator Semiconductor	2004	18
Distribution of the contact-potential difference local values over the gate area of MOS structures H. M. Przewłocki, D. Brzezińska, Hisham Z. Massoud Microelectronic Engineering Device ModelingGate AreaElectrical EngineeringEngineeringTunneling Microscopy	2004	17
Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al–SiO2–Si and poly–Si–SiO2–Si structures H. M. Przewłocki, Krzysztof Piskorski, D. Brzezińska Thin Solid Films Materials ScienceSemiconductor TechnologyElectrical EngineeringEffective Contact PotentialEngineering	2007	17
The triangular voltage sweep method as a tool in studies of mobile charge in MOS structures H. M. Przewłocki, W. Marciniak physica status solidi (a) Device ModelingMobile ChargesElectrical EngineeringAnalytic CalculationEngineering	1975	16
Photoelectric phenomena in metal-insulator-semiconductor structures at low electric fields in the insulator H. M. Przewłocki Journal of Applied Physics Electrical EngineeringPhotoelectric SensorEngineeringPhysicsCondensed Matter Physics	1995	15
Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal–oxide–semiconductor devices Hisham Z. Massoud, H. M. Przewłocki Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringEpitaxial GrowthEngineering	2002	15

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