Katie R. Gann

Thermal stability of epitaxial <i>α</i>-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

Jonathan P. McCandless, Celesta S. Chang, Kazuki Nomoto et al. · Applied Physics Letters · 2021 · 62 citations

Materials Science, Oxide Heterostructures, Materials Engineering +12

500 °C operation of β-Ga2O3 field-effect transistors

Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy et al. · Applied Physics Letters · 2022 · 25 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Initial nucleation of metastable γ-Ga2O3 during sub-millisecond thermal anneals of amorphous Ga2O3

Katie R. Gann, Celesta S. Chang, Ming-Chiang Chang et al. · Applied Physics Letters · 2022 · 20 citations

Engineering, Crystal Growth Technology, Initial Nucleation +18

Silicon implantation and annealing in <i>β</i>-Ga2O3: Role of ambient, temperature, and time

Katie R. Gann, Naomi Pieczulewski, Cameron A. Gorsak et al. · Journal of Applied Physics · 2024 · 16 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

<i>In situ</i> etching of <i>β</i>-Ga2O3 using <i>tert</i>-butyl chloride in an MOCVD system

Cameron A. Gorsak, Henry Bowman, Katie R. Gann et al. · Applied Physics Letters · 2024 · 11 citations · Full text