Concepedia

Yu. G. Galitsyn

YG

Statistics

Publications

9

Citations

203

H-Index

9

Active since

2006

Affiliations

Institute of Semiconductor Physics(Current)

Russian Academy of Sciences

Yu. G. Galitsyn is an author at Institute of Semiconductor Physics specializing in surface science, engineering, and applied physics.

Top concepts

EngineeringSurface ScienceApplied PhysicsMaterial ScienceChemistryNanotechnologyCrystallographyChemical KineticsSurface ChemistryPhysics

Publications per year

2006–2021

9

Publications

9

Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

V. G. Mansurov, Yu. G. Galitsyn · Journal of Crystal Growth · 2015 · 84 citations

Materials Science, Graphene-based Nano-antennas, Engineering +6

AlN growth on sapphire substrate by ammonia MBE

V. G. Mansurov, Alexey Y. Nikitin, Yu. G. Galitsyn et al. · Journal of Crystal Growth · 2007 · 30 citations

Materials Engineering, Materials Science, Aluminium Nitride +5

2D AlN crystal phase formation on (0001) Al<sub>2</sub>O<sub>3</sub> surface by ammonia MBE

V. G. Mansurov, Yu. G. Galitsyn · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2015 · 18 citations

Aluminium Nitride, Abstract Kinetics, Engineering +18

Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE

V. G. Mansurov, Yu. G. Galitsyn, Alexey Y. Nikitin et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 16 citations

Materials Science, Aluminium Nitride, Nucleation Rate +14

Kinetics and thermodynamics of Si(111) surface nitridation in ammonia

V. G. Mansurov, Yu. G. Galitsyn, A. A. Shklyaev · Journal of Crystal Growth · 2016 · 12 citations

Engineering, Surface Chemistry, Surface Science +7

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