P. Kanschat

Statistics

Publications

Citations

361

H-Index

Active since

1998

Affiliations

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute(Current)

Infineon Technologies (Germany)

Philipps University of Marburg

P. Kanschat is an author at Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute specializing in materials science, semiconductor materials, and electronic materials.

Publications per year

1998–2008

Publications

Defects and recombination in microcrystalline silicon

K. Lips, P. Kanschat, W. Fuhs · Solar Energy Materials and Solar Cells · 2003 · 67 citations

Engineering, Materials Engineering, Materials Science +12

Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

T. Laska, G. Miller, M. Pfaffenlehner et al. · 2004 · 62 citations

Engineering, Electrical Engineering, Materials Science +15

Identification of non-radiative recombination paths in microcrystalline silicon (μc-Si:H)

P. Kanschat, K. Lips, W. Fuhs · Journal of Non-Crystalline Solids · 2000 · 33 citations

Engineering, Materials Engineering, Materials Science +12

Bandtails and defects in microcrystalline silicon (μc-Si:H)

W. Fuhs, P. Kanschat, K. Lips · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 27 citations

Natural Sciences, Materials Science, Physics +17

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

P. Kanschat, H. Mell, K. Lips et al. · MRS Proceedings · 2000 · 26 citations

Engineering, Materials Engineering, Materials Science +16

1–5 of 14