Dario Pagnano

Design of a normally-off diamond JFET for high power integrated applications

Nazareno Donato, Dario Pagnano, Ettore Napoli et al. · Diamond and Related Materials · 2017 · 18 citations · Full text

Low-power Electronics, Electrical Engineering, Engineering +8

Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate

Dario Pagnano, Giorgia Longobardi, Florin Udrea et al. · Applied Physics Letters · 2019 · 15 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Suppression technique of vertical leakage current in GaN-on-Si power transistors

Giorgia Longobardi, Dario Pagnano, Florin Udrea et al. · Japanese Journal of Applied Physics · 2019 · 12 citations

On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-to-trap-tunneling through the AIN/Si barrier

Giorgia Longobardi, Shu Yang, Dario Pagnano et al. · 2017 · 11 citations

Electrical Engineering, Semiconductor Device, Engineering +14