J. Dipersio

InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance

Y. Cordier, S. Bollaert, M. Zaknoune et al. · Japanese Journal of Applied Physics · 1999 · 34 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

Y. Cordier, S. Bollaert, J. Dipersio et al. · Applied Surface Science · 1998 · 30 citations

Materials Science, Electrical Engineering, Engineering +6

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Y. Cordier, J.‐M. Chauveau, Y. Androussi et al. · Journal of Crystal Growth · 2003 · 20 citations

Materials Engineering, Electrical Engineering, Engineering +6

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Y. Cordier, D. Ferré, J.‐M. Chauveau et al. · Applied Surface Science · 2000 · 19 citations

Inverse Steps, Epitaxial Growth, Engineering +8

Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers

Y. Cordier, J.‐M. Chauveau, D. Ferré et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 17 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12