Y. Androussi

Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

T. Benabbas, P. François, Y. Androussi et al. · Journal of Applied Physics · 1996 · 112 citations

Wide-bandgap Semiconductor, Engineering, Transmission Electron Microscopy +18

A finite-element study of strain fields in vertically aligned InAs islands in GaAs

T. Benabbas, Y. Androussi, Alain Lefebvre · Journal of Applied Physics · 1999 · 106 citations

Spacer Layer Thickness, Wide-bandgap Semiconductor, Spacer Layers +17

Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

J.‐M. Chauveau, Y. Androussi, Alain Lefebvre et al. · Journal of Applied Physics · 2003 · 58 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)

S. Kret, T. Benabbas, C. Delamarre et al. · Journal of Applied Physics · 1999 · 49 citations

High Resolution, Engineering, Microscopy +17

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Arnaud Stolz, Eui-Soo Cho, El Hadj Dogheche et al. · Applied Physics Letters · 2011 · 44 citations · Full text

Wide-bandgap Semiconductor, Waveguides, Optical Materials +19