Y. Androussi - Concepedia

Author

Y. Androussi

Centre National de la Recherche Scientifique

Also Known As

Androussi, Ydir, Y Androussi, Y. Androussi

Publications

685

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université de Lille Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Institut d'électronique de microélectronique et de nanotechnologie

About

Y. Androussi is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	16	633
2	Applied Physics	15	16	633
3	Materials Science	12	12	417
4	Electrical Engineering	4	4	202
5	Materials Engineering	2	2	62

Y. Androussi

Publications

633

Citations

H-Index

Page 1

	Year	Citations
Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy T. Benabbas, P. François, Y. Androussi, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTransmission Electron MicroscopyMicroscopyFinite Element	1996	112
A finite-element study of strain fields in vertically aligned InAs islands in GaAs T. Benabbas, Y. Androussi, Alain Lefebvre Journal of Applied Physics Spacer Layer ThicknessWide-bandgap SemiconductorSpacer LayersEngineeringFinite-element Study	1999	106
Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy J.‐M. Chauveau, Y. Androussi, Alain Lefebvre, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2003	58
High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001) S. Kret, T. Benabbas, C. Delamarre, Journal of Applied Physics High ResolutionEngineeringMicroscopyElectron DiffractionSemiconductors	1999	49
Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy Arnaud Stolz, Eui-Soo Cho, El Hadj Dogheche, Applied Physics Letters Wide-bandgap SemiconductorWaveguidesOptical MaterialsEngineeringGan Structures	2011	44
A TEM investigation of the dislocation rosettes around vickers indentation in GaAs Alain Lefebvre, Y. Androussi, G. Vanderschaeve physica status solidi (a) Tem InvestigationEngineeringSevere Plastic DeformationRosette DislocationsMicrostructure-strength Relationship	1987	42
Slip and twinning in high-stress-deformed GaAs and the influence of doping Y. Androussi, G. Vanderschaeve, Alain Lefebvre Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties EngineeringSevere Plastic DeformationWork HardeningMicrostructure-strength RelationshipCompound Semiconductor	1989	37
Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures Y. Androussi, Alain Lefebvre, B. Courboulès, Applied Physics Letters Wide-bandgap SemiconductorEpitaxial GrowthEngineeringPhysicsApplied Physics	1994	32
Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers J.‐M. Chauveau, Y. Cordier, H.J. Kim, Journal of Crystal Growth Materials ScienceEngineeringPhysicsInterior LayerSurface Science	2003	26
Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots Y. Androussi Philosophical Magazine Letters EngineeringMicroscopyElectron DiffractionSemiconductor NanostructuresIi-vi Semiconductor	1999	21

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