Y. Androussi

Statistics

Publications

Citations

638

H-Index

Active since

1987

Affiliations

Centre National de la Recherche Scientifique(Current)

Université de Lille

Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Institut d'électronique de microélectronique et de nanotechnologie

Y. Androussi is an author at Centre National de la Recherche Scientifique specializing in materials science, semiconductor materials, and semiconductor physics.

Publications per year

1987–2011

Publications

Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

T. Benabbas, P. François, Y. Androussi et al. · Journal of Applied Physics · 1996 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

A finite-element study of strain fields in vertically aligned InAs islands in GaAs

T. Benabbas, Y. Androussi, Alain Lefebvre · Journal of Applied Physics · 1999 · 106 citations

Engineering, Materials Science, Physics +17

Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

J.‐M. Chauveau, Y. Androussi, Alain Lefebvre et al. · Journal of Applied Physics · 2003 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +16

High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)

S. Kret, T. Benabbas, C. Delamarre et al. · Journal of Applied Physics · 1999 · 49 citations

Natural Sciences, Materials Science, Physics +17

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Arnaud Stolz, Eui-Soo Cho, El Hadj Dogheche et al. · Applied Physics Letters · 2011 · 44 citations · Full text

Engineering, Materials Science, Physics +17

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