T. Benabbas

Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

T. Benabbas, P. François, Y. Androussi et al. · Journal of Applied Physics · 1996 · 112 citations

Wide-bandgap Semiconductor, Engineering, Transmission Electron Microscopy +18

A finite-element study of strain fields in vertically aligned InAs islands in GaAs

T. Benabbas, Y. Androussi, Alain Lefebvre · Journal of Applied Physics · 1999 · 106 citations

Spacer Layer Thickness, Wide-bandgap Semiconductor, Spacer Layers +17

High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)

S. Kret, T. Benabbas, C. Delamarre et al. · Journal of Applied Physics · 1999 · 49 citations

High Resolution, Engineering, Microscopy +17

Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands

Y. Androussi, T. Benabbas, Alain Lefebvre · Ultramicroscopy · 2002 · 19 citations

Materials Science, Engineering, Electron Microscopy +7

Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy

Damien Jacob, Y. Androussi, T. Benabbas et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 16 citations

Wide-bandgap Semiconductor, Engineering, Transmission Electron Microscopy +17