B. V. Pushnyĭ

Deep centers in AlGaN-based light emitting diode structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Solid-State Electronics · 1999 · 34 citations

Engineering, Electrical Engineering, Materials Science +13

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures

R. V. Levin, A. E. Marichev, M. Z. Shvarts et al. · Semiconductors · 2015 · 15 citations

Engineering, Electrical Engineering, Materials Science +16

GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)

S. V. Sorokina, R. V. Levin, A. E. Marichev et al. · Semiconductors · 2018 · 15 citations

Engineering, Materials Engineering, Materials Science +12

GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics

S. V. Sorokina, R. V. Levin, B. V. Pushnyĭ et al. · Semiconductors · 2016 · 11 citations

Engineering, Materials Engineering, Materials Science +14

MOCVD growth and Mg-doping of InAs layers

T. I. Voronina, T. S. Lagunova, S. S. Kizhayev et al. · Semiconductors · 2004 · 10 citations

Engineering, Materials Engineering, Materials Science +14