J.L. Casas Espínola

Thermal activation of excitons in asymmetric InAs dots-in-a-well InxGa1−xAs∕GaAs structures

T.V. Torchynska, J.L. Casas Espínola, L. Borkovska et al. · Journal of Applied Physics · 2007 · 83 citations

Categoryquantum Electronics, Optical Materials, Exciton Thermal Activation +21

Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

T.V. Torchynska, J.L. Casas Espínola, Petr G. Eliseev et al. · physica status solidi (a) · 2003 · 79 citations

Semiconductors, Categoryquantum Electronics, Ground State +15

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

T.V. Torchynska, J.L. Casas Espínola, Erasto Vergara Hernández et al. · Thin Solid Films · 2014 · 33 citations

Materials Science, Structural Properties, Photoluminescence +8

Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

T.V. Torchynska, J.L. Casas Espínola, E. Velásquez Losada et al. · Surface Science · 2003 · 33 citations

Physics, Quantum Device, Thermal Ionisation +5

“White” emission of ZnO nanosheets with thermal annealing

A. Cano, B. El Filali, T.V. Torchynska et al. · Physica E Low-dimensional Systems and Nanostructures · 2013 · 30 citations

Materials Science, Engineering, Nanomaterials +3