Jun Tae Jang

Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction

Chansoo Yoon, Ji Hye Lee, Sangik Lee et al. · Nano Letters · 2017 · 106 citations

Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation

Jun Tae Jang, Jozeph Park, Byung Du Ahn et al. · ACS Applied Materials & Interfaces · 2015 · 102 citations

Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process

Sung Hun Ryu, Youngjae Park, Mallory Mativenga et al. · ECS Solid State Letters · 2012 · 87 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

Mi Jung Lee, Sangik Lee, Sungmin Lee et al. · NPG Asia Materials · 2018 · 56 citations · Full text

Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

Jun Tae Jang, Geumho Ahn, Sung‐Jin Choi et al. · Electronics · 2019 · 44 citations · Full text

Engineering, Readout Voltage, Phase Change Memory +21