Geumho Ahn

Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

Jun Tae Jang, Geumho Ahn, Sung‐Jin Choi et al. · Electronics · 2019 · 44 citations · Full text

Engineering, Readout Voltage, Phase Change Memory +21

Effect of oxygen content of the LaAlO 3 layer on the synaptic behavior of Pt/LaAlO 3 /Nb-doped SrTiO 3 memristors for neuromorphic applications

Jun Tae Jang, Daehyun Ko, Geumho Ahn et al. · Solid-State Electronics · 2017 · 29 citations

Materials Science, /Nb-doped Srtio 3, Engineering +6

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

Jun Tae Jang, Daehyun Ko, Sungju Choi et al. · Solid-State Electronics · 2017 · 23 citations

Electrical Engineering, Image Sensor, Engineering +8

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

Jihyun Rhee, Sungju Choi, Hara Kang et al. · Solid-State Electronics · 2017 · 21 citations

Activation Energy, Electrical Engineering, Charge Trapping +7