Jihyun Rhee

Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Sungju Choi, Jae-Young Kim, Hara Kang et al. · Materials · 2019 · 63 citations · Full text

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

Jun Tae Jang, Daehyun Ko, Sungju Choi et al. · Solid-State Electronics · 2017 · 23 citations

Electrical Engineering, Image Sensor, Engineering +8

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

Jihyun Rhee, Sungju Choi, Hara Kang et al. · Solid-State Electronics · 2017 · 21 citations

Activation Energy, Electrical Engineering, Charge Trapping +7

Method to Extract Interface and Bulk Trap Separately Over the Full Sub-Gap Range in Amorphous InGaZnO Thin-Film Transistors by Using Various Channel Thicknesses

Sungju Choi, Jae-Young Kim, Jihyun Rhee et al. · IEEE Electron Device Letters · 2019 · 21 citations

Bulk Trap Separately, Semiconductor Technology, Electrical Engineering +15

Influence of the Gate/Drain Voltage Configuration on the Current Stress Instability in Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Self-Aligned Top-Gate Structure

Sungju Choi, Shinyoung Park, Jaeyoung Kim et al. · IEEE Electron Device Letters · 2019 · 11 citations

Engineering, Current Stress, Semiconductor Device +16