Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation

TLDR

Persistent photoconduction limits oxide semiconductor TFTs in displays, and ZnON has a smaller bandgap and fewer valence band tail states than a‑IGZO. This study combines experimental results and device simulation to investigate ZnON TFTs and introduces an activation energy window concept to explain PPC via photoinduced electron doping and peroxide formation. The authors use monochromatic photonic C–V spectroscopy to estimate subgap state densities, revealing differences between ZnON and a‑IGZO, and employ the activation energy window framework to.

Abstract

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In–Ga–Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C–V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.