Scott Ageno - Concepedia

Author

Scott Ageno

Arizona State University

Also Known As

S Ageno, S. Ageno, S. K. Ageno, S.K. Ageno, Scott Ageno, Scott K. Ageno

Publications

229

Citations

H-Index

Concepts

All Affiliations

Arizona State University Motorola (United States)

About

Scott Ageno is an author at Arizona State University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	185
2	Applied Physics	7	7	162
3	Electrical Engineering	5	5	122
4	Chemistry	1	1	19
5	Materials Engineering	1	1	11

Scott Ageno

Publications

185

Citations

H-Index

Page 1

	Year	Citations
Low‐temperature amorphous‐silicon backplane technology development for flexible displays in a manufacturing pilot‐line environment Gregory B. Raupp, Shawn M. O’Rourke, Curt Moyer, Journal of the Society for Information Display EngineeringIntegrated CircuitsDisplay‐scale Pilot LineElectronic DevicesWafer Scale Processing	2007	56
Temporary bond-debond process for manufacture of flexible electronics: Impact of adhesive and carrier properties on performance Jesmin Haq, Scott Ageno, Gregory B. Raupp, Journal of Applied Physics Temporary Bond-debond MethodEngineeringMechanical EngineeringSoft MatterCarrier Properties	2010	35
Choosing an optimum large signal model for GaAs MESFETs and HEMTs M. Miller, Mike Golio, B. Beckwith, Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringMicrowave Device Modeling	2002	23
65.4: Active Matrix PHOLED Displays on Temporary Bonded Polyethylene Naphthalate Substrates with 180 °C a‐Si:H TFTs Doug Loy, Yong Kyun Lee, Cynthia S. Bell, SID Symposium Digest of Technical Papers Registration DistortionH TftsEngineeringQvga Active MatrixIntegrated Circuits	2009	19
Diffusion of zinc into Ga1−<i>x</i>Al<i>x</i>As Scott Ageno, R. J. Roedel, N. Mellen, Applied Physics Letters Materials SciencePoint DefectsEngineeringDiffusion ResistanceApplied Physics	1985	17
30.2: Active Matrix Electrophoretic Displays on Temporary Bonded Stainless Steel Substrates with 180 °C a‐Si:H TFTs Shawn M. O’Rourke, Sameer M. Venugopal, Gregory B. Raupp, SID Symposium Digest of Technical Papers Materials ScienceElectrical EngineeringH TftsStainless Steel SubstratesEngineering	2008	13
Very low-noise HEMTs using a 0.2μm T-gate W. Linwood Jones, Scott Ageno, Takahide Sato Electronics Letters Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronics	1987	11
Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si: H TFTs Shawn M. O’Rourke, Sameer M. Venugopal, Gregory B. Raupp, Materials EngineeringMaterials ScienceStainless Steel SubstratesH TftsEngineering	2008	11

Page 1