SID Symposium Digest of Technical Papers · 2009 · 19 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous SemiconductorsDisplay TechnologiesSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsAmorphous Semiconductor FilmsAmorphous Silicon Thin-film TransistorsAmorphous Thin FilmsDisplay ApplicationsDisplay SubstratesSaturation
Abstract A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1‐inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.773 cm 2 /V‐sec, layer to layer registration distortion less than 10ppm and low defectivity. The efficiency of the OLED display is 39 cd/A at 500 nits.
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Organic electroluminescent diodes
Chak Wah Tang, S. A. VanSlyke · Applied Physics Letters · 1987 · 14.3K citations
Natural Sciences, Materials Engineering, Materials Science +17
Highly efficient phosphorescent emission from organic electroluminescent devices
Marc A. Baldo, D. F. O’Brien, Yujian You et al. · Nature · 1998 · 7.2K citations
Improved energy transfer in electrophosphorescent devices
D. F. O’Brien, Marc A. Baldo, Mark E. Thompson et al. · Applied Physics Letters · 1999 · 695 citations
Transparent light-emitting devices
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