Publication | Closed Access
65.4: Active Matrix PHOLED Displays on Temporary Bonded Polyethylene Naphthalate Substrates with 180 °C a‐Si:H TFTs
19
Citations
12
References
2009
Year
Registration DistortionH TftsEngineeringQvga Active MatrixIntegrated CircuitsChemistryThin Film Process TechnologyElectronic DevicesDisplay TechnologyAdvanced Display TechnologyPolymer ChemistryThin Film ProcessingMaterials ScienceElectrical EngineeringSaturation MobilitiesSemiconductor Device Fabrication°C A‐siElectronic MaterialsApplied PhysicsFunctional Materials
Abstract A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1‐inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.773 cm 2 /V‐sec, layer to layer registration distortion less than 10ppm and low defectivity. The efficiency of the OLED display is 39 cd/A at 500 nits.
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