Diffusion of zinc into Ga1−<i>x</i>Al<i>x</i>As

Abstract

A study of the diffusion of zinc into Ga1−xAlxAs with a ‘‘leaky tube’’ diffusion furnace has been carried out. The Ga1−xAlxAs epitaxial layers were grown with liquid phase epitaxy, and the aluminum concentration was varied from 0 to 44% in 4% increments; diffusions were performed in the temperature range 550–650 °C. It was found that the junction depth versus aluminum concentration was not a simple, monotonically increasing curve; rather, dramatic decreases in the apparent diffusion coefficient at xAl≊0.05 and xAl≊0.20 suggest that point defects, possibly including the DX center, are playing a significant role.