F.E. Rosztoczy - Concepedia

Author

F.E. Rosztoczy

Varian Medical Systems (United States)

Also Known As

F. E. Rosztoczy, F. Rosztoczy, F.E. Rosztoczy, FERENC E. ROSZTOCZY, Ferenc E. Rosztoczy

Publications

351

Citations

H-Index

Concepts

All Affiliations

Varian Medical Systems (United States)

About

F.E. Rosztoczy is an author at Varian Medical Systems (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	275
2	Applied Physics	6	6	247
3	Natural Sciences	1	1	17
4	Biochemistry	1	1	17
5	Chemistry	1	1	17

F.E. Rosztoczy

Publications

275

Citations

H-Index

Page 1

	Year	Citations
Germanium-Doped Gallium Arsenide F.E. Rosztoczy, F. Ermanis, I. Hayashi, Journal of Applied Physics SemiconductorsElectrical EngineeringGaas CrystalsEngineeringPhysics	1970	102
High-efficiency GaAs lo-hi-lo IMPATT devices by liquid phase epitaxy for <i>X</i> band R.E. Goldwasser, F.E. Rosztoczy Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1974	43
Distribution Coefficient of Germanium in Gallium Arsenide Crystals Grown from Gallium Solutions F.E. Rosztoczy, K. B. Wolfstirn Journal of Applied Physics Materials ScienceSemiconductorsEngineeringPhysicsCrystalline Defects	1971	42
Growth and Evaluation of Epitaxial GaAs for Microwave Devices F.E. Rosztoczy, Joshyo Kinoshita Journal of The Electrochemical Society SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyGunn Devices	1974	27
The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase Epitaxy F.E. Rosztoczy, William W. Stein Journal of The Electrochemical Society Electrical EngineeringEngineeringGap-si HeterojunctionsApplied PhysicsSemiconductor Material	1972	20
The Potassium-Iodine, Rubidium-Iodine, and Cesium-Iodine Phase Diagrams<sup>1</sup> F.E. Rosztoczy, Daniel Cubicciotti The Journal of Physical Chemistry Inorganic ChemistryEngineeringDaniel CubicciotticiteBiochemistryPhysics	1965	17
X-band GaAs double-drift IMPATT devices M. Omori, F.E. Rosztoczy, Ryoji Hayashi Proceedings of the IEEE Semiconductor TechnologyElectrical EngineeringLiquid-phase Epitaxial GrowthEngineeringRf Semiconductor	1973	13
Gunn-Effect Amplifiers for Microwave Communication Systems in X, Ku, and Ka Bands J.G. de Koning, R.E. Goldwasser, R.J. Hamilton, IEEE Transactions on Microwave Theory and Techniques PhotonicsElectrical EngineeringKa BandsEngineeringRadio Frequency	1975	11

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