Hirotaka Oosato

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Jiangwei Liu, Meiyong Liao, Masataka Imura et al. · Journal of Applied Physics · 2013 · 89 citations

Engineering, Materials Engineering, Materials Science +17

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

Jiangwei Liu, Hirotaka Oosato, Meiyong Liao et al. · Applied Physics Letters · 2017 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

Jiangwei Liu, Meiyong Liao, Masataka Imura et al. · Applied Physics Letters · 2013 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

Jiangwei Liu, Meiyong Liao, Masataka Imura et al. · Applied Physics Letters · 2014 · 45 citations

Engineering, Electrical Engineering, Materials Science +16

Diamond field effect transistors with a high-dielectric constant Ta₂O₅as gate material

Masataka Imura, Eiichiro Watanabe, Hirotaka Oosato et al. · Journal of Physics D Applied Physics · 2014 · 41 citations

Engineering, Electrical Engineering, Materials Science +17